proximity effect造句
例句與造句
- The proximity effects of spin - splitting in superconducting junctions
超導(dǎo)結(jié)中自旋分裂的鄰近效應(yīng) - A study on superconducting proximity effect and electron energy state distribution
與電子能態(tài)分布研究 - The proximity effect of synmmetrical cable employing copper clad steel as conductor
采用銅包鋼復(fù)合線的對(duì)稱電纜鄰近效應(yīng) - It may also be used to compensate for proximity effect or to reduce the low frequencies that can make an instrument sound dull or “ muddy
還可用它來(lái)補(bǔ)償鄰近效應(yīng)，或降低可使樂(lè)器聲音顯得沈悶或“拖泥帶水”的低頻部分。 - Use this setting with vocals or instruments to compensate for proximity effect or to reduce the low frequencies that can make an instrument sound dull or muddy
可用它來(lái)補(bǔ)償人聲或樂(lè)器的鄰近效應(yīng)，或降低可使樂(lè)器聲音顯得沈悶或拖泥帶水的低頻部分。 - It's difficult to find proximity effect in a sentence. 用proximity effect造句挺難的
- Piezoresistivity of ecac may involve proximity effect , microcrack and the staggered arrangements of conductive pass - ways due to shear strength of aggregates
壓敏產(chǎn)生的原因是導(dǎo)電瀝青混凝土試件的壓縮鄰近效應(yīng)、微裂紋和石料間的剪切力使部分導(dǎo)電通路錯(cuò)位。 - As the ic manufacturing process develops from sub - micron to very deep submicron ( vdsm ) technologies , with current lithography tools ( 248nm and 193nm ) , foundries can not manufacture products that designs want because of so - called optical proximity effect ( ope )
當(dāng)集成電路生產(chǎn)工藝發(fā)展到納米級(jí)時(shí)，利用現(xiàn)有的曝光設(shè)備( 248nm和193nm ) ，由于所謂的光學(xué)鄰近效應(yīng)，集成電路制造廠商已經(jīng)無(wú)法制造出滿足電路功能要求的產(chǎn)品。 - We form a ly a line sample from spectra of 19 qsos in the literature . in this analysis , we demonstrate that a proximity effect is present in the data ; i . e . , there exists a significant deficit of lines at zabs = zem , within 4h - 1 mpc of the qso emission redshift . and the deficit depends on the rest equivalent width of the lines , with weak lines showing a relatively weaker effect
我們發(fā)現(xiàn)所選樣本中確實(shí)存在接近效應(yīng)，特別在z _ ( abs ) z _ ( em )附近距類星體4h ~ ( - 1 ) mpc范圍內(nèi)， ly森林的線數(shù)相對(duì)演化規(guī)律估計(jì)得到的線數(shù)缺少很顯著，并且與譜線的靜止等值寬度有關(guān)，弱線的接近效應(yīng)較弱。 - Abstract : a new method for determining proximity parameters , , and in electron - beam lithography is introduced on the assumption that the point exposure spread function is composed of two gaussians . a single line is used as test pattern to determine proximity effect parameters and the normalization approach is adopted in experimental data transaction in order to eliminate the need of measuring exposure clearing dose of the resist . furthermore , the parameters acquired by this method are successfully used for proximity effect correction in electron - beam lithography on the same experimental conditions
文摘:在電子散射能量沉積為雙高斯分布的前提下,提出了一種提取電子束光刻中電子散射參數(shù),和的新方法.該方法使用單線條作為測(cè)試圖形.為了避免測(cè)定光刻膠的顯影閾值,在實(shí)驗(yàn)數(shù)據(jù)處理中使用歸一化方法.此外,用此方法提取的電子散射參數(shù)被成功地用于相同實(shí)驗(yàn)條件下的電子束臨近效應(yīng)校正 - Developing the lithography process models to properly characterize critical dimension ( cd ) variations caused by proximity effects and distortions introduced by patterning tool , reticule , resist exposure , development and etching , they are beneficial to develop a yield - driven layout design tool , the engineers could use it to automate the tasks of advanced mask design , verification and inspection in deep sub - micron semiconductor manufacturing
建立準(zhǔn)確描述由于掩模制造工藝、光刻膠曝光、顯影、蝕刻所引起的光學(xué)鄰近效應(yīng)和畸變所導(dǎo)致的關(guān)鍵尺寸變化的光刻工藝模型，有助于開(kāi)發(fā)由成品率驅(qū)動(dòng)的版圖設(shè)計(jì)工具，自動(dòng)地實(shí)現(xiàn)深亞微米下半導(dǎo)體制造中先進(jìn)的掩模設(shè)計(jì)、驗(yàn)證和檢查等任務(wù)。 - Based on the maxwell ' s equations , the one - dimensional foil conductor ' s current density distribution equals the sum of the independent skin effect and the proximity effect current density distributions , and the one - dimensional foil conductor ' s loss equals the sum of the independent skin effect and the proximity effect losses
本文從maxwell電磁場(chǎng)方程出發(fā)對(duì)一層薄銅箔的趨膚和鄰近損耗進(jìn)行了研究，得出銅箔的總損耗是趨膚和鄰近效應(yīng)單獨(dú)起作用產(chǎn)生的損耗的和。